STPSC30G12-Y Datasheet (STMicroelectronics) - 30A power Schottky high surge silicon carbide diode

STPSC30G12-Y, 30A power Schottky high surge silicon carbide diode

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Thanks to the Schottky construction,

STPSC30G12-Y Features

* AEC-Q101 qualified and PPAP capable

* None or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* Operating Tj from -55 °C to 175 °C

* Avalanche energy rated

* ECOPACK2 compliant compo