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STPSC30G12-Y

30A power Schottky high surge silicon carbide diode

STPSC30G12-Y Features

* AEC-Q101 qualified and PPAP capable

* None or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* Operating Tj from -55 °C to 175 °C

* Avalanche energy rated

* ECOPACK2 compliant compo

STPSC30G12-Y General Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction,.

STPSC30G12-Y Datasheet (488.24 KB)

Preview of STPSC30G12-Y PDF

Datasheet Details

Part number:

STPSC30G12-Y

Manufacturer:

STMicroelectronics ↗

File Size:

488.24 KB

Description:

30a power schottky high surge silicon carbide diode.

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STPSC30G12-Y 30A power Schottky high surge silicon carbide diode STMicroelectronics

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