STPSC31H12C-Y power Schottky silicon carbide diode

STMicroelectronics

Description

STPSC31H12C-Y Datasheet 2 X 15 A, 1200 V power Schottky silicon carbide diode A1 K A2 TO-247 A2 K A1 Product status link STPSC31H12C-Y Product su.
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.

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Datasheet Specifications

Part number: STPSC31H12C-Y
Manufacturer: STMicroelectronics ↗
File Size: 212.05 KB
Datasheet: STPSC31H12C-Y-STMicroelectronics.pdf
Description: power Schottky silicon carbide diode

Features

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high-voltage periphery
* PPAP capable
* Operating Tj from -40 °C to 175 °C

Applications

* OBC (on board battery chargers)
* PHEV - EV charging stations
* Resonant LLC topology

STPSC31H12C-Y Distributors

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STPSC31H12C-Y power Schottky silicon carbide diode STMicroelectronics

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