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STPSC31H12C-Y

power Schottky silicon carbide diode

STPSC31H12C-Y Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high-voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* ECOPACK 2 compliant Applications

* OBC (on bo

STPSC31H12C-Y General Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is sho.

STPSC31H12C-Y Datasheet (212.05 KB)

Preview of STPSC31H12C-Y PDF

Datasheet Details

Part number:

STPSC31H12C-Y

Manufacturer:

STMicroelectronics ↗

File Size:

212.05 KB

Description:

Power schottky silicon carbide diode.
STPSC31H12C-Y Datasheet 2 X 15 A, 1200 V power Schottky silicon carbide diode A1 K A2 TO-247 A2 K A1 Product status link STPSC31H12C-Y Product su.

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STPSC31H12C-Y power Schottky silicon carbide diode STMicroelectronics

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