Datasheet4U Logo Datasheet4U.com

STPSC31H12C-Y Datasheet - STMicroelectronics

STPSC31H12C-Y power Schottky silicon carbide diode

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is sho.

STPSC31H12C-Y Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high-voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* ECOPACK 2 compliant Applications

* OBC (on bo

STPSC31H12C-Y Datasheet (212.05 KB)

Preview of STPSC31H12C-Y PDF

Datasheet Details

Part number:

STPSC31H12C-Y

Manufacturer:

STMicroelectronics ↗

File Size:

212.05 KB

Description:

Power schottky silicon carbide diode.

📁 Related Datasheet

STPSC30G12 30A power Schottky high surge silicon carbide diode (STMicroelectronics)

STPSC30G12-Y 30A power Schottky high surge silicon carbide diode (STMicroelectronics)

STPSC1006 Schottky silicon carbide diode (ST Microelectronics)

STPSC10065 Schottky silicon carbide diode (STMicroelectronics)

STPSC10065DLF power Schottky silicon carbide diode (STMicroelectronics)

STPSC1006D 600 V power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065 power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065-Y Automotive 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065BY-TR Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065DLF power Schottky silicon carbide diode (STMicroelectronics)

TAGS

STPSC31H12C-Y power Schottky silicon carbide diode STMicroelectronics

Image Gallery

STPSC31H12C-Y Datasheet Preview Page 2 STPSC31H12C-Y Datasheet Preview Page 3

STPSC31H12C-Y Distributor