Datasheet Details
Part number:
STPSC40H12C-Y
Manufacturer:
File Size:
251.25 KB
Description:
Power schottky silicon carbide diode.
STPSC40H12C-Y-STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC40H12C-Y
Manufacturer:
File Size:
251.25 KB
Description:
Power schottky silicon carbide diode.
STPSC40H12C-Y, power Schottky silicon carbide diode
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is sho
STPSC40H12C-Y Features
* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high-voltage periphery
* PPAP capable
* Operating Tj from -40 °C to 175 °C
* ECOPACK2 compliant Applications
* OBC (On Boa
📁 Related Datasheet
📌 All Tags