STPSC4H065 Datasheet (STMicroelectronics) - 4A high surge silicon carbide power Schottky diode

STPSC4H065, 4A high surge silicon carbide power Schottky diode

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and rin

STPSC4H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* Insulated package TO-220AC Ins:

* Insulated voltage: 2500 VRMS

* Typical package capacitance: 7 pF

* Pow