Datasheet4U Logo Datasheet4U.com

STPSC4H065 Datasheet - STMicroelectronics

STPSC4H065 4A high surge silicon carbide power Schottky diode

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and rin.

STPSC4H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* Insulated package TO-220AC Ins:

* Insulated voltage: 2500 VRMS

* Typical package capacitance: 7 pF

* Pow

STPSC4H065 Datasheet (317.48 KB)

Preview of STPSC4H065 PDF
STPSC4H065 Datasheet Preview Page 2 STPSC4H065 Datasheet Preview Page 3

Datasheet Details

Part number:

STPSC4H065

Manufacturer:

STMicroelectronics ↗

File Size:

317.48 KB

Description:

4a high surge silicon carbide power schottky diode.

📁 Related Datasheet

STPSC4H065DLF 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC406 600V power Schottky silicon carbide diode (ST Microelectronics)

STPSC40H12C 40A power Schottky silicon carbide diode (STMicroelectronics)

STPSC40H12C-Y power Schottky silicon carbide diode (STMicroelectronics)

STPSC1006 Schottky silicon carbide diode (ST Microelectronics)

STPSC10065 Schottky silicon carbide diode (STMicroelectronics)

STPSC10065DLF power Schottky silicon carbide diode (STMicroelectronics)

STPSC1006D 600 V power Schottky silicon carbide diode (STMicroelectronics)

TAGS

STPSC4H065 high surge silicon carbide power Schottky diode STMicroelectronics

STPSC4H065 Distributor