Datasheet Details
Part number:
STPSC40H12C
Manufacturer:
File Size:
436.26 KB
Description:
40a power schottky silicon carbide diode.
STPSC40H12C-STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC40H12C
Manufacturer:
File Size:
436.26 KB
Description:
40a power schottky silicon carbide diode.
STPSC40H12C, 40A power Schottky silicon carbide diode
The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is
STPSC40H12C Features
* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating Tj from -40 °C to 175 °C
* ECOPACK2 compliant component Applications
* Solar inverter
* Boost PFC
* Air co
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