STPSC4H065DLF Datasheet (STMicroelectronics) - 650V power Schottky silicon carbide diode

STPSC4H065DLF, 650V power Schottky silicon carbide diode

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and r

STPSC4H065DLF Features

* Less than 1 mm height package

* High creepage package

* No or negligible reverse recovery

* Temperature independent switching behavior

* High forward surge capability

* Low drop forward voltage

* Power efficient product

* ECOPACK2 com