STPSC4H065DLF Datasheet - STMicroelectronics

650V power Schottky silicon carbide diode

STPSC4H065DLF Features

* Less than 1 mm height package

* High creepage package

* No or negligible reverse recovery

* Temperature independent switching behavior

* High forward surge capability

* Low drop forward voltage

* Power efficient product

* ECOPACK2 com

STPSC4H065DLF General Description

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and r.

STPSC4H065DLF Datasheet (376.68 KB)

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Datasheet Details

Part number:

STPSC4H065DLF

Manufacturer:

STMicroelectronics ↗

File Size:

376.68 KB

Description:

650v power schottky silicon carbide diode.
STPSC4H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC4H065DLF Product summary Symbol Value IF(AV) 4A VRR.

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STPSC4H065DLF 650V power Schottky silicon carbide diode STMicroelectronics

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STPSC4H065DLF Features

STPSC4H065DLF General Description

Datasheet Details

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