K4S643232C, K4S - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

K4S643232C Description

K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the righ.
The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high per.

K4S643232C Features

* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive

K4S643232C Applications

* ORDERING INFORMATION Part NO. K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80 K4S643232C-TC/L10 Max Freq. 183MHz 166MHz 143MHz 125MHz 100MHz Interface Package LVTTL 86 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE

📥 Download Datasheet

K4S643232C Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S643232C, K4S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: K4S643232C, K4S
Manufacturer: Samsung semiconductor
File Size: 1.13 MB
Datasheet: K4S-6432.pdf
Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Note: This datasheet PDF includes multiple part numbers: K4S643232C, K4S.
Please refer to the document for exact specifications by model.

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📌 All Tags

SDRAM 512K 32bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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