Datasheet Details
- Part number
- K4S643232E
- Manufacturer
- Samsung semiconductor
- File Size
- 102.47 KB
- Datasheet
- K4S643232E_Samsungsemiconductor.pdf
- Description
- 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E Description
K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right.
The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high per.
K4S643232E Features
* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive
K4S643232E Applications
* ORDERING INFORMATION
Part NO. K4S643232E-TC/L45 K4S643232E-TC/L50 K4S643232E-TC/L55 K4S643232E-TC/L60 K4S643232E-TC/L70 Max Freq. 222MHz 200MHz 183MHz 166MHz 143MHz Interface Package
LVTTL
86 TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
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