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KM416S8030B, KM4-16S 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

KM416S8030B Description

KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the rig.
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

KM416S8030B Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

KM416S8030B Applications

* ORDERING INFORMATION Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package KM416S8030BT-G/F10 66MHz(CL=2 &3) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 2M x 16 Sense AMP 2M x 16 2M x 16 2M x 16 Refresh Counter Ou

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: KM416S8030B, KM4-16S. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KM416S8030B, KM4-16S
Manufacturer
Samsung semiconductor
File Size
133.48 KB
Datasheet
KM4-16S-8030B.pdf
Description
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Note
This datasheet PDF includes multiple part numbers: KM416S8030B, KM4-16S.
Please refer to the document for exact specifications by model.

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128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor
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