HYB39S16160CT-6 1M x 16 MBit Synchronous DRAM

Siemens Semiconductor

HYB39S16160CT-6 Description

www.DataSheet4U.com HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications * High Pe.
LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM P.

HYB39S16160CT-6 Features

* ck, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the word line a

HYB39S16160CT-6 Applications

* High Performance: -6 fCKmax @ CL=3 tCK3 tAC3 fCKmax @ CL=2 tCK2 tAC2 166 6 5 125 8 6 -7 143 7 5.5 115 9 6 Units MHz ns ns MHz ns ns
* full page(optional) for sequencial wrap around Multiple Burst Read with Si

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Datasheet Details

Part number: HYB39S16160CT-6
Manufacturer: Siemens Semiconductor
File Size: 173.11 KB
Datasheet: HYB39S16160CT-6_SiemensSemiconductor.pdf
Description: 1M x 16 MBit Synchronous DRAM

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MBit Synchronous DRAM Siemens Semiconductor

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