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SVSP7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP7N60FJDD2 Description

Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVSP7N60FJDD2 Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L
* 7A,600V, RDS(on)(typ. )=0.48@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme dv/dt rated
* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER

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Datasheet Details

Part number
SVSP7N60FJDD2
Manufacturer
Silan Microelectronics
File Size
347.69 KB
Datasheet
SVSP7N60FJDD2-SilanMicroelectronics.pdf
Description
600V SUPER JUNCTION MOS POWER TRANSISTOR

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600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVSP7N60FJDD2-like datasheet