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SVSP65R110THD4, SVSP65R110P7HD4-SilanSemiconductors 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R110THD4 Description

Silan Microelectronics SVSP65R110P7(T)(S)(FJD)(L)HD4_Datasheet 35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVSP65R110THD4 Features

* 35A, 650V, RDS(on)(typ. )=90mΩ@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFOR

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SVSP65R110THD4, SVSP65R110P7HD4-SilanSemiconductors. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SVSP65R110THD4, SVSP65R110P7HD4-SilanSemiconductors
Manufacturer
Silan Semiconductors
File Size
563.31 KB
Datasheet
SVSP65R110P7HD4-SilanSemiconductors_removed.pdf
Description
650V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: SVSP65R110THD4, SVSP65R110P7HD4-SilanSemiconductors.
Please refer to the document for exact specifications by model.

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650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors
Silan Semiconductors SVSP65R110THD4-like datasheet