K2600G Datasheet, Triggered, Sunmate

K2600G Features

• Triggered
• Excellent capability of absorbing transient surge
• Quick response to surge voltage (ns Level)
• Glass passivated junctions
• High voltage lcmp ignitor

PDF File Details

Part number:

K2600G

Manufacturer:

Sunmate

File Size:

1.28MB

Download:

📄 Datasheet

Description:

Axial leaded silicon bilateral voltage triggered.

TAGS

K2600G

Sunmate

📁 Related Datasheet

K2600G - Sidac (JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd K0900G Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p.

K2600S - Sidac (JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd K0900S Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p.

K2601 - 2SK2601 (Toshiba Semiconductor)
2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low d.

K2604 - 2SK2604 (Toshiba Semiconductor)
.. .. .. .. .. .

K2605 - 2SK2605 (Toshiba Semiconductor)
2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source .

K2607 - Silicon N-Channel FET (Toshiba Semiconductor)
2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications.

K2608 - 2SK2608 (Toshiba Semiconductor)
2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistan.

K2610 - 2SK2610 (Toshiba Semiconductor)
.DataSheet.co.kr 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2610 Chopper Regulator, DC−DC Converter and Mot.

K2611 - 2SK2611 (Toshiba Semiconductor)
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit.

K2611 - Silicon N-Channel MOSFET (Winsemi)
Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc.