1SS293 Datasheet - Toshiba Semiconductor

1SS293 Diode

TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package : VF (3) = 0.54V (typ.) : IR = 5µA (max) 1SS293 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO P Tj Tstg Rating Unit 45 V 40 V 300 mA 100 mA 300 mW.

1SS293_ToshibaSemiconductor.pdf