1SS294 Datasheet - Toshiba Semiconductor

1SS294 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5μA (max) Small package : SC 59 Note1: For detail information, please contact to our sales. 1SS294 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Ave.

1SS294_ToshibaSemiconductor.pdf