1SS294
Toshiba ↗ Semiconductor
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Silicon epitaxial schottky barrier type diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
* AEC-Q101 Qualified (Note1)
* Low forward vo.
📁 Related Datasheet
1SS293 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage Low reverse surrent Small package
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1SS295 - Diode
(Toshiba Semiconductor)
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1SS200 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
1SS200
Unit: mm
z Low forward voltage
: VF (3) = 0.92V (t.
1SS201 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse r.
1SS201 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS220 - (1SS220 / 1SS221) SILICON SWITCHING DIODES
(NEC)
..
.
1SS226 - Switching Diodes
(Toshiba Semiconductor)
Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1) Note 1: For .
1SS226 - SURFACE MOUNT FAST SWITCHING DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
1SS226
SURFACE MOUNT FAST SWITCHING DIODE
Pb
Features
Dual Diode Series
Fast Switching Surface Mount Package Ideally Sui.
