1SS286 - Silicon Schottky Barrier Diode

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Hitachi Semiconductor

Part number	1SS286
Manufacturer	Hitachi Semiconductor
File Size	27.40 KB
Description	Silicon Schottky Barrier Diode
Datasheet	1SS286 Datasheet
Additional preview pages of the 1SS286 datasheet.

Very low reverse current.
Detection efficiency is very good.
Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100.
55 to +100 U.

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Published: Mar 23, 2005 |