GT5G102 Datasheet (Toshiba Semiconductor)

GT5G102, Silicon N-Channel IGBT

GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) Enhancement-mode 12 V gate drive Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC 1 ms Ta = 25°C Tc = 2