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GT5G102 Datasheet - Toshiba Semiconductor

GT5G102 Silicon N-Channel IGBT

GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) Enhancement-mode 12 V gate drive Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC 1 ms Ta = 25°C Tc = 2.

GT5G102 Datasheet (77.08 KB)

Preview of GT5G102 PDF

Datasheet Details

Part number:

GT5G102

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

77.08 KB

Description:

Silicon n-channel igbt.

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GT5G102 Silicon N-Channel IGBT Toshiba Semiconductor

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