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GT5G131 Datasheet - Toshiba Semiconductor

GT5G131 Silicon N-Channel IGBT

GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse D.

GT5G131 Datasheet (289.56 KB)

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Datasheet Details

Part number:

GT5G131

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

289.56 KB

Description:

Silicon n-channel igbt.

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GT5G131 Silicon N-Channel IGBT Toshiba Semiconductor

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