Datasheet Details
Part number:
GT5G131
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
289.56 KB
Description:
Silicon n-channel igbt.
GT5G131_ToshibaSemiconductor.pdf
GT5G131_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT5G131
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
289.56 KB
Description:
Silicon n-channel igbt.
GT5G131, Silicon N-Channel IGBT
GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse D
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