Datasheet4U Logo Datasheet4U.com

GT5G131 Silicon N-Channel IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm * * *

📥 Download Datasheet

Preview of GT5G131 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* Unit: mm
* 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Maximum R

GT5G131 Distributors

📁 Related Datasheet

  • GT5G134 - Silicon N-Channel IGBT (Toshiba)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50J341 - Silicon N-Channel IGBT (Toshiba)
  • GT50J342 - Silicon N-Channel IGBT (Toshiba)

📌 All Tags

Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT5G131-like datasheet