Datasheet4U.com

GT5G134 - Silicon N-Channel IGBT

Toshiba

📥 Download Datasheet

GT5G134 Datasheet Preview — Preview of GT5G134 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GT5G134
Manufacturer	Toshiba ↗
File Size	237.92 KB
Description	Silicon N-Channel IGBT
Datasheet	GT5G134-Toshiba.pdf

GT5G134 Product details

Features

(1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ. ) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package 3. Packaging and Internal Circuit GT5G134 SOP-8 1,2,3: Emitter 4: Gate 5,6,7,8: Collector Start of commercial production 2012-07 1 2014-01-07 Rev.2.0 GT5G134 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Chara.

📁 GT5G134 Similar Datasheet

GT5G131 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT5G133 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT5G101 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
GT5G102 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT5G103 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
GT50G102 - Insulated Gate Bipolar Transistor (ETC)
GT50G321 - silicon N-channel IGBT (Toshiba Semiconductor)
GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)

Other Datasheets by Toshiba

GT50J101 - TRANSISTOR IGBT
GT50J123 - Silicon N-Channel IGBT
GT50J341 - Silicon N-Channel IGBT
GT50J342 - Silicon N-Channel IGBT
GT50JR21 - Silicon N-Channel IGBT
GT50JR22 - Silicon N-Channel IGBT

Published: Jan 30, 2024 |