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GT5G134 - Silicon N-Channel IGBT

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Features

  • (1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ. ) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package 3. Packaging and Internal Circuit GT5G134 SOP-8 1,2,3: Emitter 4: Gate 5,6,7,8: Collector Start of commercial production 2012-07 1 2014-01-07 Rev.2.0 GT5G134 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Chara.

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Datasheet Details

Part number GT5G134
Manufacturer Toshiba
File Size 237.92 KB
Description Silicon N-Channel IGBT
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Discrete IGBTs Silicon N-Channel IGBT GT5G134 1. Applications • Dedicated to Photo-Flash Intensity Control Applications • Dedicated to High-Speed-Switching Photo Flash Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ.) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package 3. Packaging and Internal Circuit GT5G134 SOP-8 1,2,3: Emitter 4: Gate 5,6,7,8: Collector Start of commercial production 2012-07 1 2014-01-07 Rev.2.0 GT5G134 4.
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