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GT5G133 Datasheet - Toshiba Semiconductor

GT5G133 Silicon N-Channel IGBT

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Puls.

GT5G133 Datasheet (243.67 KB)

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Datasheet Details

Part number:

GT5G133

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

243.67 KB

Description:

Silicon n-channel igbt.

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GT5G133 Silicon N-Channel IGBT Toshiba Semiconductor

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