Datasheet Details
Part number:
GT5G133
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
243.67 KB
Description:
Silicon n-channel igbt.
GT5G133_ToshibaSemiconductor.pdf
GT5G133_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT5G133
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
243.67 KB
Description:
Silicon n-channel igbt.
GT5G133, Silicon N-Channel IGBT
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Puls
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