Datasheet4U Logo Datasheet4U.com

GT5G133 - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet preview – GT5G133

Datasheet Details

Part number GT5G133
Manufacturer Toshiba Semiconductor
File Size 243.67 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT5G133 Datasheet
Additional preview pages of the GT5G133 datasheet.

📁 Similar Datasheet

  • GT5G134 - Silicon N-Channel IGBT (Toshiba)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50J341 - Silicon N-Channel IGBT (Toshiba)
  • GT50J342 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR21 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR22 - Silicon N-Channel IGBT (Toshiba)
  • GT50N324 - silicon N-channel IGBT (Toshiba)
  • GT50NR21 - Silicon N-Channel IGBT (Toshiba)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Pulse (Note 1) ICP 130 A Collector power (Note 2a) PC (1) 0.83 W dissipation(t = 10 s) (Note 2b) PC (2) 0.69 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
Published: |