SSM3K05FU Datasheet (Toshiba Semiconductor)

SSM3K05FU, Silicon N-Channel MOSFET

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 400 800 150 150 -55~150 Unit V V mA Drain power dissipation (Ta = 25