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SSM3K09FU Datasheet - Toshiba Semiconductor

SSM3K09FU Silicon N-Channel MOSFET

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID Pulse IDP 400 mA 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Cha.

SSM3K09FU Datasheet (212.10 KB)

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Datasheet Details

Part number:

SSM3K09FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

212.10 KB

Description:

Silicon n-channel mosfet.

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SSM3K09FU Silicon N-Channel MOSFET Toshiba Semiconductor

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