SSM3K333R - Silicon N-Channel MOSFET

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Toshiba Semiconductor

Part number	SSM3K333R
Manufacturer	Toshiba Semiconductor
File Size	391.67 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K333R Datasheet
Additional preview pages of the SSM3K333R datasheet.

(1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2025-02-20 Rev.3.0 SSM3K333R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage.

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Published: Sep 18, 2014 |