SSM6N25TU Datasheet - Toshiba Semiconductor

SSM6N25TU N-Channel MOSFET

SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N25TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1 6 2 5 Characteristics Symbol Rating Unit 3 4 +0.

SSM6N25TU Datasheet (208.16 KB)