SSM6N25TU N-Channel MOSFET

Toshiba Semiconductor

Description

SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N25TU High Speed Switching Applications * Optimum for hi.

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Datasheet Specifications

Part number: SSM6N25TU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 208.16 KB
Datasheet: SSM6N25TU-ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Optimum for high-density mounting in small packages
* Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) (

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SSM6N25TU N-Channel MOSFET Toshiba Semiconductor

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