SSM6N29TU Datasheet - Toshiba Semiconductor

SSM6N29TU Field Effect Transistor

SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications 1.8 V drive N-ch 2-in-1 Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Unit V μA μA V S mΩ pF pF pF ns V Unit: mm Ron = 143 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common) Characteristic Drain-source voltage Gate-source voltag.

SSM6N29TU Datasheet (140.43 KB)