Datasheet Specifications
- Part number
- TIM4450-60SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 108.35 KB
- Datasheet
- TIM4450-60SL_ToshibaSemiconductor.pdf
- Description
- LOW INTERMODULATION DISTORTION
Description
www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-60SL TECHNICAL DATA .
Features
* T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) UNIT dBm dB A dBApplications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein isTIM4450-60SL Distributors
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