TIM4450-4UL

MICROWAVE POWER GaAs FET

Toshiba Semiconductor

* TIM4450-4UL

* HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz

* HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz

* BROAD BAND INTERNALLY MATCHED

* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Pow

TIM4450-4UL

Toshiba ↗ Semiconductor

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Microwave power gaas fet.

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TIM4450-4UL MICROWAVE POWER GaAs FET Toshiba Semiconductor

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