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TIM4450-4UL MICROWAVE POWER GaAs FET

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Description

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA .

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Features

* TIM4450-4UL
* HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
* HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz
* BROAD BAND INTERNALLY MATCHED
* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Pow

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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TIM4450-4UL MICROWAVE POWER GaAs FET Toshiba Semiconductor
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