Datasheet Specifications
- Part number
- TIM4450-8SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 117.30 KB
- Datasheet
- TIM4450-8SL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA .
Features
* n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz TIM4450-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VApplications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein isTIM4450-8SL Distributors
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