Part number:
TIM4450-8SL
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
117.30 KB
Description:
Microwave power gaas fet.
* n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz TIM4450-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point V
TIM4450-8SL Datasheet (117.30 KB)
TIM4450-8SL
Toshiba ↗ Semiconductor
117.30 KB
Microwave power gaas fet.
📁 Related Datasheet
TIM4450-16UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM4450-4UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM4450-60SL LOW INTERMODULATION DISTORTION (Toshiba Semiconductor)
TIM-LC GPS Receiver (uBlox)
TIM-LH GPS Receiver Module (uBlox)
TIM0910-15L MICROWAVE POWER GaAs FET (Toshiba)
TIM0910-30L MICROWAVE POWER GaAs FET (Toshiba)
TIM0910-4 MICROWAVE POWER GaAs FET (Toshiba)
TIM0910-8 MICROWAVE POWER GaAs FET (Toshiba)
TIM1011-15L MICROWAVE POWER GaAs FET (Toshiba)