Datasheet Details
Part number:
TPCP8301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
318.41 KB
Description:
MOSFET
Features
* rea
* 100 Single-device value at dual operation (Note 3b) (A) ID max (Pulse)
* 10 1 ms
* 10 ms
* Drain current ID
* 1
* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
* 1
* 10
* 0.1
* 0.1
TPCP8301_ToshibaSemiconductor.pdf
TPCP8301, MOSFET
TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ ) www.DataSheet4U.com TPCP8301 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) E
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