TPCP8301 Datasheet - Toshiba Semiconductor

TPCP8301 MOSFET

TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ ) www.DataSheet4U.com TPCP8301 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) E.

TPCP8301 Features

* rea

* 100 Single-device value at dual operation (Note 3b) (A) ID max (Pulse)

* 10 1 ms

* 10 ms

* Drain current ID

* 1

* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

* 1

* 10

* 0.1

TPCP8301_ToshibaSemiconductor.pdf

TPCP8301 Datasheet Preview — Preview of TPCP8301 PDF

Datasheet Details

Part number:

TPCP8301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

318.41 KB

Description:

Mosfet.

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TPCP8301 TPCP8301 MOSFET Toshiba Semiconductor

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