Datasheet Details
Part number:
TPCP8302
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
289.52 KB
Description:
MOSFET
Features
* 100 1000 Pulse width tw (s) Safe operating area
* 100 Single-device value at dual operation (Note 3b) (A) ID max (Pulse)
* 10 1 ms
* 10 ms
* Drain current ID
* 1
* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
TPCP8302_ToshibaSemiconductor.pdf
TPCP8302, MOSFET
TPCP8302 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅳ) TPCP8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth =
TPCP8302 Distributor
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