TPCP8302 Datasheet - Toshiba Semiconductor

TPCP8302 MOSFET

TPCP8302 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅳ) TPCP8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth =

TPCP8302 Features

* 100 1000 Pulse width tw (s) Safe operating area

* 100 Single-device value at dual operation (Note 3b) (A) ID max (Pulse)

* 10 1 ms

* 10 ms

* Drain current ID

* 1

* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

TPCP8302_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCP8302

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

289.52 KB

Description:

Mosfet.

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TPCP8302 TPCP8302 MOSFET Toshiba Semiconductor

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