* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 1: Sourc
TPCP8305 Datasheet (226.56 KB)
TPCP8305
Toshiba ↗ Semiconductor
226.56 KB
Mosfets.
TPCP8305
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8305
1. Applications
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* Lithium-Ion Secondary Batteries Power Management Switche.
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