TPCP8303 Datasheet (Toshiba Semiconductor)

TPCP8303, Field Effect Transistor

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.3 to 1.0 V (VDS = 10 V, ID = 1 mA) Unit:

TPCP8303 Features

* ) ID max (Pulse)

* 10 t = 1 ms

* Drain current ID 10 ms

* 1

* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

* 1

* 10 VDSS max

* 100

* 0.1

* 0.1 Drain

* source voltage VDS (V)