* ) ID max (Pulse)
* 10 t = 1 ms
* Drain current ID 10 ms
* 1
* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
* 1
* 10 VDSS max
* 100
* 0.1
* 0.1 Drain
* source voltage VDS (V)
TPCP8303 Datasheet (215.42 KB)
TPCP8303
Toshiba ↗ Semiconductor
215.42 KB
Field effect transistor.
TPCP8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
TPCP8303
Lithium Ion Battery Applications Notebook PC Applications Porta.
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