TPCP8303 Datasheet - Toshiba Semiconductor

TPCP8303 Field Effect Transistor

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.3 to 1.0 V (VDS = 10 V, ID = 1 mA) Unit: .

TPCP8303 Features

* ) ID max (Pulse)

* 10 t = 1 ms

* Drain current ID 10 ms

* 1

* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

* 1

* 10 VDSS max

* 100

* 0.1

* 0.1 Drain

* source voltage VDS (V)

TPCP8303 Datasheet (215.42 KB)

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Datasheet Details

Part number:

TPCP8303

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

215.42 KB

Description:

Field effect transistor.

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TPCP8303 Field Effect Transistor Toshiba Semiconductor

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