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TPCP8306 MOSFETs

TPCP8306 Description

TPCP8306 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8306 1.Applications * * Notebook PCs Mobile Handsets 2..

TPCP8306 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1: Sourc

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MOSFETs Toshiba Semiconductor
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