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TPCP8306

MOSFETs

TPCP8306 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1: Sourc

TPCP8306 Datasheet (229.35 KB)

Preview of TPCP8306 PDF

Datasheet Details

Part number:

TPCP8306

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

229.35 KB

Description:

Mosfets.

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TPCP8306 MOSFETs Toshiba Semiconductor

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