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2SC2380 - Silicon NPN Transistor

Datasheet Summary

Features

  • . Output Power : P =12W(Min. ) (f=470MHz, V C C=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.6V, Pi=3W, f=470MHz Unit in mm.

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Datasheet Details

Part number 2SC2380
Manufacturer Toshiba
File Size 65.39 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2380 Datasheet
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Full PDF Text Transcription

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SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =12W(Min.) (f=470MHz, V C C=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.6V, Pi=3W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 Collector-Emitter Voltage v CE0 17 Emitter-Base Voltage VEBO 3.5 Collector Current IC 2.8 Collector Power Dissipation 30 (Tc=25°C) 1. EMITTER 2. BASE 3. EMITTER 4.
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