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2SC2380 - Silicon NPN Transistor

2SC2380 Description

SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 UHF BAND POWER AMPLIFIER APPLICATIONS..

2SC2380 Features

* . Output Power : P =12W(Min. ) (f=470MHz, V C C=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.6V, Pi=3W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 Collector-Emitter Voltag

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Silicon NPN Transistor Toshiba
Toshiba 2SC2380-like datasheet