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2SC2380 Silicon NPN Transistor

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Description

SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 UHF BAND POWER AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number
2SC2380
Manufacturer
Toshiba ↗
File Size
65.39 KB
Datasheet
2SC2380_Toshiba.pdf
Description
Silicon NPN Transistor

Features

* . Output Power : P =12W(Min. ) (f=470MHz, V C C=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.6V, Pi=3W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 Collector-Emitter Voltag

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