Datasheet4U Logo Datasheet4U.com

2SC2381 - Silicon NPN Transistor

Datasheet Summary

Features

  • . Output Power : P =25W(Min. ) (f=470MHz, V CC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.6V, Pi=10W, f=470MHz Unit in mm.

📥 Download Datasheet

Datasheet preview – 2SC2381

Datasheet Details

Part number 2SC2381
Manufacturer Toshiba
File Size 63.65 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2381 Datasheet
Additional preview pages of the 2SC2381 datasheet.

📁 Similar Datasheet

  • 2SC2383 - TRANSISTOR (Toshiba Semiconductor)
  • 2SC2383 - NPN Transistor (INCHANGE)
  • 2SC2383 - NPN EPITAXIAL SILICON TRANSISTOR (Unisonic Technologies)
  • 2SC2383-O - NPN Transistor (MCC)
  • 2SC2383-R - NPN Transistor (MCC)
  • 2SC2383-Y - NPN Transistor (MCC)
  • 2SC2383T - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC2389 - (2SC2389 / 2SC2390) NPN Silicon Transistor (Rohm)
  • 2SC2389S - High-voltage Amplifier Transistor (Rohm)
  • 2SC2304 - NPN Transistor (INCHANGE)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =25W(Min.) (f=470MHz, V CC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C c=12.6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL 'CBO 'CEO 'EBO IC PC L stg RATING 35 17 3.5 UNIT V 50 I. EMITTER Z. BASE 3. EMITTER 4. COLLECTOR 175 -65~175 °C EIA.
Published: |