SSM3K56ACT Datasheet - Toshiba

SSM3K56ACT, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K56ACT 1.

Features

* (1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration CST3 SSM3K56ACT 1.Gate 2.Source 3.Drain ©201

SSM3K56ACT-Toshiba.pdf