SSM3K56ACT - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration CST3 SSM3K56ACT 1.Gate 2.Source 3.Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.2.0 SSM3K56ACT 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta =.

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Published: Aug 12, 2020 |