SSM3K56MFV Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon N-Channel MOS SSM3K56MFV 1.Applications * High-Speed Switching 2..

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Datasheet Specifications

Part number: SSM3K56MFV
Manufacturer: Toshiba ↗ Semiconductor
File Size: 197.14 KB
Datasheet: SSM3K56MFV-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration VESM SSM3K56MFV 1. Gate 2. Source 3. Drain S

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SSM3K56MFV Silicon N-Channel MOSFET Toshiba Semiconductor

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