SSM3K56CT Datasheet - Toshiba Semiconductor

SSM3K56CT, N-Channel MOSFET

SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1.

Features

* (1) (2) 1.5-V gate drive voltage.
Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1.Gate 2.Source 3.Drain CST3 4. Absolute M

SSM3K56CT-ToshibaSemiconductor.pdf