SSM3K56CT - N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K56CT
Manufacturer	Toshiba Semiconductor
File Size	202.56 KB
Description	N-Channel MOSFET
Datasheet	SSM3K56CT-ToshibaSemiconductor.pdf

(1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1.Gate 2.Source 3.Drain CST3 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Channel temperature St.

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Published: Sep 14, 2014 |