Datasheet Specifications
- Part number
- SSM3K56CT
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 202.56 KB
- Datasheet
- SSM3K56CT-ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1.Applications * High-Speed Switching 2..
Features
* (1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1.Gate 2.Source 3.Drain CST3 4. Absolute MSSM3K56CT Distributors
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