TK3A90E Datasheet - Toshiba

TK3A90E, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK3A90E 1.

Features

* (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK3A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Rating

TK3A90E-Toshiba.pdf