Datasheet4U.com

TK3A90E - N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK3A90E Datasheet Preview — Preview of TK3A90E PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK3A90E
Manufacturer	Toshiba
File Size	385.04 KB
Description	N-Channel MOSFET
Datasheet	TK3A90E-Toshiba.pdf

TK3A90E Product details

Features

(1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK3A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-puls.

📁 TK3A90E Similar Datasheet

TK3A - Current Transducer (Topstek)
TK3A60DA - N-Channel MOSFET (Toshiba Semiconductor)
TK3A65D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK3A65DA - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30A06J3A - MOSFET (Toshiba Semiconductor)
TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

TK31A60W - Silicon N-Channel MOSFET
TK31E60W - Silicon N-Channel MOSFET
TK31E60X - Silicon N-Channel MOSFET
TK31J60W - Silicon N-Channel MOSFET
TK31N60W - Silicon N-Channel MOSFET
TK31N60X - Silicon N-Channel MOSFET

Published: Oct 4, 2020 |