Datasheet4U Logo Datasheet4U.com

1SS272 - Silicon Epitaxial Planar Type Diode

1SS272 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application * Low forward voltage : VF (3) = 0.92V (typ.) * F.

1SS272 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

📥 Download Datasheet

Preview of 1SS272 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 1SS270 - Silicon Diode (Hitachi Semiconductor)
  • 1SS270A - HIGH SPEED SWITCHING DIODE (EIC)
  • 1SS220 - (1SS220 / 1SS221) SILICON SWITCHING DIODES (NEC)
  • 1SS239 - Silicon Epitaxial Schottky Diode (ETC)
  • 1SS244 - Switching diode (Rohm)
  • 1SS254 - High Speed Switching Ultra Mini Diode (Rohm)
  • 1SS286 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
  • 1SS101 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)

📌 All Tags

Silicon Epitaxial Planar Type Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS272-like datasheet