Datasheet Details
- Part number
- 1SS385
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 253.06 KB
- Datasheet
- 1SS385_ToshibaSemiconductor.pdf
- Description
- Silicon diode
1SS385 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF =.
1SS385 Applications
* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel
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