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2SD2129 - Silicon NPN Transistor

2SD2129 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive A.

2SD2129 Applications

* Hammer Drive, Pulse Motor Drive Applications Unit: mm
* High DC current gain: hFE = 2000 (min)
* Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter volta

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Silicon NPN Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SD2129-like datasheet