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2SD2531 Silicon NPN Transistor

2SD2531 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications 2SD2531 Unit: mm * Low collector saturation voltage.

2SD2531 Applications

* 2SD2531 Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.5 V (typ. ) (IC = 2.5 A, IB = 0.25 A)
* High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter

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Silicon NPN Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SD2531-like datasheet