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2SK3567 - N-Channel MOSFET

2SK3567 Description

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications * * * <.

2SK3567 Applications

* Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ. ) High forward transfer admittance: |Yfs| = 2.5S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www. DataSheet4U. com Absolute Maxi

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N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor 2SK3567-like datasheet