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2SK3568 - N-Channel MOSFET

2SK3568 Description

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm * Low drain-.

2SK3568 Applications

* Unit: mm
* Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ. )
* High forward transfer admittance: |Yfs| = 8.5 S (typ. )
* Low leakage current: IDSS = 100 μA (VDS = 500 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T

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N-Channel MOSFET Toshiba Semiconductor
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