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2SK3863 - N-Channel MOSFET

2SK3863 Description

www.DataSheet4U.com 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3863 Switching Regulator Applications *.

2SK3863 Features

* r use in equipment or systems that require extraordinarily h

2SK3863 Applications

* Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ. ) High forward transfer admittance: |Yfs| = 2.8 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 0.95 MAX. 0.6 ± 0.15 Unit: mm 6.8 MA

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N-Channel MOSFET Toshiba Semiconductor
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