Datasheet Details
- Part number
- TIM4450-60SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 108.35 KB
- Datasheet
- TIM4450-60SL_ToshibaSemiconductor.pdf
- Description
- LOW INTERMODULATION DISTORTION
TIM4450-60SL Description
www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-60SL TECHNICAL DATA .TIM4450-60SL Features
* T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) UNIT dBm dB A dBTIM4450-60SL Applications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is
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