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TIM5964-6UL - MICROWAVE POWER GaAs FET

TIM5964-6UL Description

MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA .

TIM5964-6UL Features

* HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz
* HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain

TIM5964-6UL Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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MICROWAVE POWER GaAs FET Toshiba Semiconductor
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