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TK10E60W Silicon N-Channel MOSFET

TK10E60W Description

TK10E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10E60W 1.Applications * Switching Voltage Regulators 2..

TK10E60W Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolut

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Silicon N-Channel MOSFET Toshiba Semiconductor
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