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TK10J80E Silicon N-Channel MOSFET

TK10J80E Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK10J80E 1.Applications * Switching Voltage Regulators 2..

TK10J80E Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial pro

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Silicon N-Channel MOSFET Toshiba Semiconductor
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